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1GB kit (512MBX2) PC-3200 400MHz ECC Dual Channel DDR SAMSUNG![1GB kit (512MBX2) PC-3200 400MHz ECC Dual Channel DDR <font color=red><b>SAMSUNG</b></font>]()
Features of Dual DDR memory architecture include:
Highest memory bandwidth: Dual DDR combines the power of DDR400 with two independent memory controllers, which yields a staggering 6.4GB per second of memory bandwidth¡Xtwice the memory bandwidth of other DDR400 chipsets. Increased memory bandwidth delivers better system and graphics performance, resulting in more overall productivity.
Lowest latency: Both memory controllers operate concurrently with each other to hide latencies associated with typical chipsets. For example, controller "A" reads or writes to main memory while controller "B" prepares for the next access, and vice versa. As important is the second-generation DASP (dynamic adaptive speculative preprocessor), which has been re-architected for improved performance.
1024MB (512MB x 2 modules)
PC3200 400MHz
Low Density Industry Standard
Chip Type: 32Mx8 / 64Mx8 DRAM Standard
6 Layer Ultra Low Noise Shielded PCB
Error Checking: ECC
184-pin DIMM
CAS Latency: CL2.5 or CL3.0
Optimized for Dual Channel Operation
Voltage: 2.5v-2.8V
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